1 edition 1.7 december 1999 FLL600IQ-3 l-band medium & high power gaas fet description the FLL600IQ-3 is a 60 watt gaas fet that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power l-band amplifiers. this product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. this new product is uniquely suited for use in wll and mmds base station amplifiers as it offers high gain, long term reliability and ease of use. fujitsu s stringent quality assurance program assures the highest reliability and consistent performance. features ? push-pull configuration ? high power output: 60w ?high pae: 43%. ?broad frequency range: 2000 to 2700 mhz. ?suitable for class ab operation. item drain current transconductance pinch-off voltage gate-source breakdown voltage output power at 1 db g.c.p. power gain at 1 db g.c.p. power-added efficiency thermal resistance symbol i dss v gso -12 - -2432 -1.0 -2.0 -3.5 -5 - - 47.0 48.0 - 9.0 10.0 - - 43 - - 0.8 1.2 v ds = 5v, v gs = 0v v ds = 5v, i ds = 14.4a v ds = 5v, i ds = 1.44a i gs = -1.44ma channel to case v ds = 12v f=2.7 ghz i ds = 4.0a a s v db dbm v c/w % gm v p p 1db g 1db add drain current - 11.0 15.0 a i dsr r th conditions unit limits typ. max. min. electrical characteristics (ambient temperature ta=25 c) g.c.p.: gain compression point case style: iq parameter drain-source voltage gate-source voltage total power dissipation storage temperature channel temperature symbol v ds tc = 25 c v v w c c v gs p t t stg t ch condition 125 -65 to +175 +175 -5 15 rating unit absolute maximum ratings (ambient temperature ta=25 c) fujitsu recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 12 volts. 2. the forward and reverse gate currents should not exceed 78 and -32 ma respectively with gate resistance of 25 ? . 3. the operating channel temperature (t ch ) should not exceed 145 c.
2 FLL600IQ-3 l-band medium & high power gaas fet v ds = 12.0v i ds = 4.0a f = 2.7ghz output power & add vs. input power 20 22 24 26 28 30 32 34 36 38 40 29 31 33 35 37 39 41 43 45 47 49 50 10 0 20 30 40 50 60 output power (dbm) 35 37 39 41 43 45 47 49 51 output power (dbm) add (%) p out add v ds = 12.0v i ds = 4.0a f = 2.7ghz output power vs. frequency 2.4 2.5 2.6 2.7 2.8 25dbm 30dbm 35dbm 38dbm pin=40dbm frequency (ghz) input power (dbm) power derating curve 40 80 100 120 140 60 20 0 50 100 150 200 case temperature ( c) total power dissipation (w)
3 FLL600IQ-3 l-band medium & high power gaas fet s-parameters v ds = 12v, i ds = 2000ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 500 .978 178.4 .905 76.5 .005 47.5 .807 176.5 600 .974 176.4 .793 73.0 .005 51.3 .895 175.3 700 .972 175.0 .729 69.5 .006 61.1 .896 174.9 800 .962 173.6 .684 66.2 .006 58.1 .886 174.1 900 .961 172.5 .690 62.2 .008 51.9 .873 173.1 1000 .952 170.7 .688 57.1 .009 51.7 .866 172.4 1100 .944 168.6 .718 51.1 .011 56.7 .858 171.7 1200 .933 167.0 .740 44.6 .013 50.1 .844 171.3 1300 .924 165.2 .784 37.5 .014 46.6 .832 171.1 1400 .901 162.7 .836 29.6 .016 42.9 .823 171.0 1500 .881 160.4 .898 20.8 .018 36.2 .814 171.2 1600 .853 157.8 .959 11.6 .020 28.6 .815 171.7 1700 .816 155.2 1.043 1.3 .023 23.3 .818 172.6 1800 .778 152.9 1.116 -10.0 .024 16.5 .828 172.9 1900 .736 151.0 1.231 -20.8 .026 7.8 .843 173.3 2000 .704 148.6 1.386 -32.8 .029 -9.8 .864 172.4 2100 .636 146.2 1.566 -47.5 .026 -22.1 .871 171.2 2200 .579 145.5 1.730 -61.5 .025 -30.4 .887 169.9 2300 .508 145.9 1.998 -78.1 .025 -45.0 .876 167.5 2400 .439 152.3 2.278 -97.6 .023 -65.2 .843 164.8 2500 .439 166.3 2.605 -116.1 .020 -94.7 .782 163.6 2600 .562 172.4 2.774 -144.5 .013 -141.0 .697 166.2 2700 .700 162.6 2.675 -173.0 .013 137.0 .661 173.7 2800 .755 146.1 2.312 160.3 .016 85.1 .692 -179.9 2900 .723 126.8 1.967 137.9 .021 51.3 .748 -177.1 3000 .648 107.1 1.649 119.3 .026 37.5 .805 -176.7 3100 .579 74.7 1.536 101.2 .034 23.2 .841 -177.3 3200 .477 26.1 1.338 78.5 .040 2.4 .875 -178.6 3300 .318 -33.9 .963 58.0 .038 -21.5 .909 179.2 note: this s-parameter data shows measurements performed on a single-ended push-pull fet. these parameters should be used to determine the calculated push-pull s-parameter amplifier designs. -60 -56 -52 -48 -44 -40 -36 -32 -28 30 28 26 32 34 36 38 40 42 44 total output power (dbm) v ds = 12v i ds = 4.0a f = 2.7ghz ? f = 5.0mhz 2-tone test imd (dbc) output power vs. imd im5 im3
4 for further information please contact: fujitsu compound semiconductor, inc. 2355 zanker rd. san jose, ca 95131-1138, u.s.a. phone: (408) 232-9500 fax: (408) 428-9111 www.fcsi.fujitsu.com fujitsu microelectronics, ltd. compound semiconductor division network house norreys drive maidenhead, berkshire sl6 4fj phone:+44 (0)1628 504800 fax:+44 (0)1628 504888 fujitsu limited reserves the right to change products and specifications without notice. the information does not convey any license under rights of fujitsu limited or others. ? 1998 fujitsu compound semiconductor, inc. printed in u.s.a. fcsi0598m200 fujitsu compound semiconductor products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: caution do not put these products into the mouth. do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FLL600IQ-3 l-band medium & high power gaas fet case style "iq" unit: mm (inches) 8.0 (0.315) 1.9 (0.075) 2.5 min. 2.5 min. 17.4 (0.685) 4-r1.3 (0.051) 16.4 (0.646) 0.2 0.15 6.0 (0.236) 0.2 20.4 (0.803) 0.2 24.0 (0.945) 0.2 0.2 0.2 2.0 (0.079) 1 2 5 4 3 1, 2: gate 3: source 4, 5: drain 0.13 2.4 (0.094) 4.4 max. 0.1 (0.004)
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